PART |
Description |
Maker |
3410GH142M400HPA1 3410DH102M350HPA1 3410EG212M250H |
Round Snap-In Aluminum Electrolytic Capaci-
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Cornell Dubilier Electr...
|
ST |
SuperTan? Wet Tantalum Capacitors with Hermetic Seal, FEATURES: Very High Capacitance, 10 to 1800μF, 25 to 125VDC, -55°C to 125°C, Very Low ESR and High Ripple Current
|
Vishay
|
XCV405E-8BG560C XCV405E-8BG560I XCV405E-8FG560C XC |
Fast, Extended Block RAM, 1.8 V FPGA Family Extended Memory Field Programmable Gate Arrays
|
XILINX[Xilinx, Inc] Xilinx, Inc.
|
ST25E16 ST24E16 ST24EB3TR ST24EB6TR ST24EM1TR ST24 |
SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 16K (2K X 8) EEPROM 16 Kbit Serial I 2 C EEPROM with Extended Addressing (ST24E16 / ST25E16) 16 Kbit Serial I2C EEPROM with Extended Addressing CONFIGURATION DEVICE, 16MBIT,UBGA88; Memory type:Configuration FLASH; Interface type:Serial, Parallel; Memory size:16Mbit; Memory configuration:2MB; Time, access:90ns; Frequency:66.7MHz; Temp, op. min:0(degree C); Temp, op. RoHS Compliant: Yes 16 Kbit Serial I2C EEPROM with Extended Addressing 16千位串行I2C EEPROM,带有扩展寻址
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http:// ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output 40ns; 4K x 4 CMOS dynamic RAM with extended data output 50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers G-LINK Technology
|
K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
Q67100-H9020 SDE2526 Q67100-H3262 Q67100-H3261 SDE |
Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with Extended Temperature Range 非易失性内与I2C总线接口与千位E2PROM的扩展温度范 OSC 5V SMT 7X5 CMOS PROGRM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with Extended Temperature Range(2-K位EEPROM(带IIC总线接口,扩展温度范围)) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
0812-1X1T-36 |
1port.Y/GO LEDs.RJ45 10/100Base-TX INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo⑩ with LEDs INTEGRATED CONNECTOR MODULES 10/100Base-TX Extended Temp belCombo with LEDs
|
Bel Fuse Inc.
|
S558-5999-Z6 |
Extended Temp Xfmr Module
|
BEL FUSE INC
|
CSM-7-DN |
Extended Temp Range Crystal
|
List of Unclassifed Manufacturers ETC[ETC]
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